Analysis of the oxygen impurity atoms beneath the surface of Cz-silicon by CPAA-Reference-Cited by-同舟云学术

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Analysis of the oxygen impurity atoms beneath the surface of Cz-silicon by CPAA

Published:1999-11 Issue:5 Volume:51 Page:533-542
ISSN:0969-8043
Container-title:Applied Radiation and Isotopes
language:en
Short-container-title:Applied Radiation and Isotopes

Author:

Degas F.,Erramli H.,Blondiaux G.

Publisher

Elsevier BV

Subject

Radiation

Reference16 articles.

1. Microanalysis of the stable isotopes of oxygen by means of nuclear reactions

2. The problem of diffusion during charged particle activation analysis; the case of18F in pure germanium single crystals

3. Characterization of Semiconductor Materials by Charged Particle Activation

4. Physical Chemistry of, In and On Silicon;Cerofolini,1989

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charged Particle Activation Analysis: Applications;Encyclopedia of Analytical Chemistry;2017-06-19

2. Charged Particle Activation Analysis;Encyclopedia of Analytical Chemistry;2009-09-15

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