Quenching of the radiation trapping in a dense Ga vapour in a quartz cell induced by atom/surface interaction

Author:

Bicchi P.,Barsanti S.

Publisher

Elsevier BV

Subject

Radiation

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Interaction of Gallium Atoms with the Surface of the Quartz Cell;Journal of Contemporary Physics (Armenian Academy of Sciences);2018-07

2. Gallium doped SiO2: Towards a new luminescent material;Journal of Non-Crystalline Solids;2007-04

3. Spectroscopy of an optical excited Ga doped SiO2 surface;Radiation Physics and Chemistry;2007-03

4. Spectroscopy of laser-excited indium, gallium and indium–gallium systems;Radiation Physics and Chemistry;2007-03

5. Excitation of the nP→52S1/2 series in dense Ga vapour via energy-pooling ionisation;Radiation Physics and Chemistry;2003-09

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