Chapter 6 Transport and defect properties of intrinsic and boron-doped diamond-Reference-Cited by-同舟云学术

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Chapter 6 Transport and defect properties of intrinsic and boron-doped diamond

Published:2003 Issue: Volume: Page:261-324
ISSN:0080-8784
Container-title:Thin-Film Diamond I
language:
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Author:

Nebel C.E.

Publisher

Elsevier

Reference106 articles.

1. Particle and radiation detectors based on diamond;Bergonzo;Phys. Status Solidi A,2001

2. Polykristalline Diamantschichten für elektronische Anwendungen;Boettger,1995

3. Boron-doped homoepitaxial diamond layers: fabrication, characterization and electronic applications;Borst;Phys. Status Solidi A,1996

4. Electronic properties of amorphous carbon films;Bredas;J. Phys. C: Solid State Phys,1985

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3. Large-area high-quality single crystal diamond;MRS Bulletin;2014-06

4. XPS and ToF-SIMS investigation of nanocrystalline diamond oxidized surfaces;Applied Surface Science;2013-07

5. The influence of thermal annealing on the electronic defect states in nanocrystalline CVD diamond films;physica status solidi (a);2008-09

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