Chapter 1 Fundamental Properties of III-V Semiconductor Two-Dimensional Quantized Structures: The Basis for Optical and Electronic Device Applications-Reference-Cited by-同舟云学术

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Chapter 1 Fundamental Properties of III-V Semiconductor Two-Dimensional Quantized Structures: The Basis for Optical and Electronic Device Applications

Published:1987 Issue: Volume: Page:1-133
ISSN:0080-8784
Container-title:Semiconductors and Semimetals
language:
Short-container-title:

Author:

Weisbuch C.

Publisher

Elsevier

Reference541 articles.

1. “The Technology and Physics of Molecular Beam Epitaxy.”,1985

2. “Molecular Beam Epitaxy.”,1985

3. MBE for HI-V Compound Semiconductors;Tsang,1985

4. Organometallic VPE growth of III-V Semiconductors;Stringfellow,1985

5. Low-Pressure MOCVD of GaxIn1-xASyP1-y Alloys;Razeghi,1985

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