Electronic Devices and Systems Based on Current Instability in Chalcogenide Semiconductors-Reference-Cited by-同舟云学术

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Electronic Devices and Systems Based on Current Instability in Chalcogenide Semiconductors

Published:2004 Issue: Volume: Page:1-56
ISSN:0080-8784
Container-title:Semiconductors and Semimetals
language:
Short-container-title:

Author:

Glebov Andrey S.

Publisher

Elsevier

Reference45 articles.

1. Experiments on Ge-GaAs heterojunctions;Anderson;Sol.-St. Electron.,1962

2. Investigations of principles of memory devices design with electrical re-writing based on memory elements from amorphous semiconductors;Andreev;Candidate's Dissertation: 01.04.10. Riazan,1976

3. Phase relations in radio engineering;Aseev,1959

4. Electroluminescent devices;Derkach,1966

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nano-Structuring Chalcogenide Semiconductor Thin Films with Electron Beam;2023 IEEE 13th International Conference Nanomaterials: Applications & Properties (NAP);2023-09-10

2. Resistive switching memory effects in chalcogenide semiconductor ZnGa2Se4 thin films;Surface Engineering;2019-06-10

3. Electrical and switching properties of Se85Te15−xSbx (0≤x≤6at.wt%) thin films;Journal of Alloys and Compounds;2011-07

4. Electrical switching in the bulk metal chalcogenide glassy semiconductor Cu10(AsSe1.4I0.2)90;Semiconductor Science and Technology;2009-07-24

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