The effects of water vapor, heating, and chemical and mechanical polishing on MOS capacitors passivated with BaF2–B2O3–GeO2

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The effects of water vapor, heating, and chemical and mechanical polishing on MOS capacitors passivated with BaF2–B2O3–GeO2–SiO2 glasses

Published:1999-07 Issue:9 Volume:34 Page:1421-1427
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Kobayashi Keiji

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Reduction of water in inorganic spin on glass

2. A Spin‐on‐Glass Film Treatment Technology Using a Fluoroalkoxysilane Vapor at Room Temperature

3. Application of Surface Reformed Thick Spin‐on‐Glass to MOS Device Planarization

4. Proceedings of the 14th International Conference on Solid State Devices;Sze,1982

5. Characterization of arsenphosphosilicate glass films for VLSI applications—Part II. Step coverage and planarization

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