Semiconducting properties of Al doped ZnO thin films-Reference-Cited by-同舟云学术

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Semiconducting properties of Al doped ZnO thin films

Published:2014-10 Issue: Volume:131 Page:512-517
ISSN:1386-1425
Container-title:Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy
language:en
Short-container-title:Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Author:

Al-Ghamdi Ahmed A.,Al-Hartomy Omar A.,El Okr M.,Nawar A.M.,El-Gazzar S.,El-Tantawy Farid,Yakuphanoglu F.

Publisher

Elsevier BV

Subject

Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference21 articles.

1. Microstructure, optical and electrical properties of gallium-doped ZnO films prepared by sol–gel method;Li;J. Alloys Comp.,2013

2. Growth and characterization of the Al-doped and Al–Sn co-doped ZnO nanostructures;Tian;Ceram. Int.,2013

3. Influence of dopant concentration on the optical properties of ZnO: in films by sol–gel method;Caglar;Thin Solid Films,2009

4. Li2CO3-doped ZnO films prepared by RF magnetron sputtering technique for acoustic device application;Water;Mater. Lett.,2002

5. The influence of precursor powders and processing parameters on the properties of SnO2-based gas sensors;Ahmad;J. Mater. Sci.,2003

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