Bottomless complexity of core structure and kink mechanisms of dislocation motion in silicon
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering
Reference21 articles.
1. In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals
2. Vacancy Interaction with Dislocations in Silicon: The Shuffle-Glide Competition
3. Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership
4. The movement of dissociated dislocations in the diamond-cubic structure
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1. Extended defects in GaAs/GaAs1-xSbx/GaAs (001) heterostructures;Scripta Materialia;2023-03
2. Atomistic approach to simulate kink migration and kink-pair formation in silicon: The kinetic activation-relaxation technique;Physical Review B;2019-10-21
3. Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures;Scripta Materialia;2018-08
4. Influence of strain on dislocation core in silicon;Philosophical Magazine;2018-01-31
5. Ab initio modeling of dislocation core properties in metals and semiconductors;Acta Materialia;2017-02
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