Influence of the doping concentration on the electrochemical etching of semiconductors
Author:
Publisher
Elsevier BV
Subject
Electrochemistry,General Chemical Engineering
Reference36 articles.
1. Resistance fluctuations in ohmic contacts due to discreteness of dopants
2. Ohmic contacts to n-type GaAs
3. Evidence for nonuniform flow of charge carriers through semiconductor junctions
4. Photoelectrochemical etching of ZnSe and nonuniform charge flow in Schottky barriers
5. Electrochemical Photocapacitance of ZnSe: Effect of Photoelectrochemical Etching
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