A novel measurement method for extraction of the base resistance in the BJT

Author:

Toker Ali

Publisher

Elsevier BV

Subject

General Engineering

Reference15 articles.

1. Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal;Verzelli;IEEE Electron Device Letters,1993

2. New method to determine the base resistance of bipolar transistors;Weng;IEEE Electron Device Letters,1992

3. Comparison of methods used for determining base spreading resistance;Unwin;Proc. IEE (London),1980

4. Base resistance measurement on bipolar junction transistors via low temperature bridge techniques;Wade;Solid-State Electronics,1976

5. Noise in high gain transistor and its application to the measurement of certain transistor parameters;Hsu;IEEE Trans. Electron Devices,1971

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