Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor-Reference-Cited by-同舟云学术

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Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor

Published:1999-06 Issue:6 Volume:30 Page:591-597
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Flores D,Godignon P,Jordà X,Vellvehi M,Fernández J,Millán J

Publisher

Elsevier BV

Subject

General Engineering

Reference11 articles.

1. The insulated gate transistor: a new three terminal MOS-controlled bipolar power device;Baliga;IEEE Trans. Electron Devices,1984

2. V.A.K. Temple, MOS controlled thyristors (MCT’s), IEEE Int. Electron Dev. Meet., 1982, p. 282.

3. A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance;Nandakumar;IEEE Electron Dev. Lett.,1991

4. Characteristics of the emitter switched thyristor;Shekar;IEEE Trans. Electron Dev.,1991

5. S. Momota, M. Atsuki, K. Sakurai, Double gate MOS device having IGBT and MCT Performances, Proc. ISPSD’92, Tokyo, 1992, pp. 28–33.

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