Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular beam epitaxial grown GaAs ( n 11)A ( n =1–4) substrates
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference30 articles.
1. Demonstration of Lateral p-n Subband Junctions in Si Delta-Doped Quantum Wells on (111)A Patterned Substrates
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