Comparison of EST structures with NMOS and PMOS transistors for controlling the thyristor current-Reference-Cited by-同舟云学术

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Comparison of EST structures with NMOS and PMOS transistors for controlling the thyristor current

Published:1998-11 Issue:11 Volume:29 Page:933-937
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Flores D.,Rebollo J.,Fernández J.,Jordà X.,Godignon P.,Millán J.

Publisher

Elsevier BV

Subject

General Engineering

Reference8 articles.

1. The Insulated Gate Rectifier (IGR): a new power switching device;Baliga;IEDM Techn Dig.,1982

2. Needs for solutions and new areas of applications for power electronics;Gertmar,1997

3. MOS Controlled Thyristors (MCTs);Temple,1984

4. The MOS-gated emitter switched thyristor;Baliga;IEEE Electron Device Lett.,1990

5. A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance;Nandakumar;IEEE Electron Device Lett.,1991

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