A new improved model for subthreshold slope for submicron MOSFETs-Reference-Cited by-同舟云学术

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A new improved model for subthreshold slope for submicron MOSFETs

Published:2000-02 Issue:2 Volume:31 Page:105-111
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Thakare S.B,Dutta A.K

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. BSIM: Berkeley short-channel IGFET model for MOS transistors;Sheu;IEEE J. Sol. St. Circ.,1987

2. Unified MOSFET model;Shur;Sol. St. Elect.,1992

3. PCIM: a physically based continuous short channel IGFET model for circuit simulation;Arora;IEEE Tran. Elect. Dev.,1994

4. A submicron DC MOSFET model for simulation of analog circuits;Chatterjee;IEEE Tran. Comp.-Aided Des.,1995

5. A simple 2D model for IGFET operation in the saturation region;El-Mansy;IEEE Tran. Elect. Dev.,1977

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel depletion layer due to source and drain junctions;IEEE Transactions on Electron Devices;2006-03

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