Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1-Reference-Cited by-同舟云学术

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Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1

Published:2000-05 Issue:5 Volume:31 Page:311-322
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Bensaoula A.H.,Rusakova I.,Bensaoula A.

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. Recent trends in III–V strained layer research

2. Physics and applications of GexSi1-x/Si strained-layer heterostructures

3. 0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer

4. Symmetry and Strain Induced Effects in Semiconductors;Bir,1974

5. A. Freundlich, A.H. Bensaoula, A. Bensaoula, V. Rossignol, InP and Related Compounds International Conference Proceedings, Paris, France, 1993, WB4, pp.489–492.

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