Present state of microwave GaAs devices-Reference-Cited by-同舟云学术

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Present state of microwave GaAs devices

Published:1982-05 Issue:3 Volume:13 Page:29-43
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Nogami M.,Hirachi Y.,Ohta K.

Publisher

Elsevier BV

Subject

General Engineering

Reference53 articles.

1. Schottky Barrier Gate Field Effect Transistor;Mead,1963

2. X and Ku Band GaAs MESFET;Baechtold;Electron. Lett.,1972

3. GaAs Microwave Schottky-Gate Field-Effect Transistor;Liechti,1972

4. Mesh Source Type Microwave Power FET;Fukuta,1973

5. GaAs8 GHz-Band High Power FET;Fukuta;IEEE Int. Electron Device Meeting,1974

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Halbleiter, Halbleiterbauelemente und Elektronenröhren;Springer-Lehrbuch;1999

2. GaAs MESFET and related processes;Bulletin of Materials Science;1990-03

3. A finite-element program for modeling transient phenomena in GaAs MESFET's;IEEE Transactions on Electron Devices;1983-09

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