A new triggering mode in a vertical bi-directional MOS-thyristor device-Reference-Cited by-同舟云学术

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A new triggering mode in a vertical bi-directional MOS-thyristor device

Published:2004-03 Issue:3 Volume:35 Page:277-285
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Bourennane A.,Breil M.,Sanchez J.-L.,Austin P.,Jalade J.

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

1. The evolution of power electronics;Wilson;IEEE Transactions on Power Electronics,2000

2. Functional integration of power devices: a new approach;Pezzani,1995

3. Bidirectional Triode P–N–P–N Switches;Gentry;Proceedings of the IEEE,1964

4. Study of power bi-directional switches using MOS-transistors;Glaize;Power Electronics and Variable Speed Drives, Third International conference. PA IEE Conference Publication,1988

5. 1200 V snuberless symmetrical GTO for AC switches;Kerboua,1993

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bipolar AC Switch for Specific Mains Applications: Design, Realization, and Characterization;IEEE Transactions on Electron Devices;2019-09

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