Quasi-lateral 2DEG–2DHG junction in AlGaAs/GaAs
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference7 articles.
1. Optical Control Of Microwave Devices;Simons,1990
2. Lateralp‐njunction formation in GaAs molecular beam epitaxy by crystal plane dependent doping
3. Spatially Resolved Detection of Electroluminescence from Lateral p-n Junctions on GaAs (111)A Patterned Substrates Using a Near-Field Scanning Optical Microscope
4. Electroluminescence from Lateral P-N Junctions Grown on (111)A GaAs Patterned Substrates
5. A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates
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