1. D.L. Sharer, Incorporation of the silicon–germanium–carbon compound in the realization of a bipolar inversion channel field-effect transistor (BICFET), PhD Thesis, The University of NC at Charlotte, 1999.
2. C.R. Taft, Germanium(X)silicide(1−X)/silicon inversion base transistors: device physics and technology, PhD Thesis, Stanford University, 1991.
3. The bipolar inversion channel field-effect transistor (BICFET)—a new field-effect solid state device: theory and structures;Taylor;IEEE Transactions on Electron Devices,1985
4. M.E. Mierzwinski, AC Performance of the Germanium(X)–silicon(1−X)/silicon inversion-base transistor, PhD Thesis, Stanford University, 1995.
5. Avant! Corporation, Medici Device Simulator Introduction, Retrieved March 29, 2002 from http://www.avanticorp.com/Avant!/SolutionsProducts/Products/Item/1,1500,192,00.html.