1. Charge control model of inverted GaAs–AlGaAs modulation doped FET's (IMODFETs);Lee;J. Vac. Sci. Technol., B,1984
2. Inverted GaAs/AlGaAs modulation-doped field-effect transistors with extremely high transconductances;Cirillo;IEEE Electron. Device Lett.,1986
3. H.I. Fujishiro, T. Saito, S. Nishi, S. Seki, Y. Sano, K. Kaminishi, Quartermicron gate inverted HEMT for high speed ICs, International Symposium on GaAs and Related Compounds, 1987, pp. 653–655.
4. A 0.5-μm-gate GaAs/AlGaAs inverted HEMT IC-multiplier and D/A converter;Nishi;IEEE Trans. Electron. Devices,1989
5. H.I. Fujishiro, H. Tsuji, S. Nishi, 0.2μm gate pseudomorphic InGaAs/AlGaAs inverted HEMTs, International Symposium on GaAs and Related Compounds 1990, pp. 453–458.