Latchup characterization of 0.18-micron STI cobalt silicided test structures

Author:

Goh Wang-Ling,Yeo Kiat-Seng,Lazuardi Stephen,Peng Wei,Leong Kam-Chew,Chan Lap,See Alex

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

1. K.C. Leong, Research Project on Latchup in Quarter Micron Technology, MEng Thesis, Nanyang Technological University, 1998.

2. Improvement of latchup hardness by geometry and technology tuning;Mazure;IEEE Trans. Electron Devices,1988

3. Characteristics of a new isolated p-well structure using thin epitaxy over the buried layer and trench isolation;Okazaki;IEEE Transactions on Electron Devices,1992

4. IEEE Recommended Practice for Latchup Test Methods for CMOS and BiCMOS Integrated-Circuit Process Characterization, IEEE, Inc, 1991.

5. W. Craig, Latchup test structures and their characterization, IEEE VLSI Workshop on Test Structures, Session IV, San Diego, CA, 1984.

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