Analytical modelling of electrical characteristics in γ-irradiated power VDMOS transistors-Reference-Cited by-同舟云学术

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Analytical modelling of electrical characteristics in γ-irradiated power VDMOS transistors

Published:2001-05 Issue:5-6 Volume:32 Page:485-490
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Manić I,Pavlović Z,Prijić Z,Davidović V,Stojadinović N

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Operation and Modeling of the MOS Transistors;Tsividis,1987

3. MOSFET Models for VLSI Circuit Simulation;Arora,1993

4. Ionizing Radiation Effects in MOS Devices and Circuits;Ma,1989

5. Analysis of gamma-irradiation induced degradation mechanisms in power VDMOSFETs;Stojadinović;Microelectron. Reliab.,1995

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET;Electronics;2022-07-02

2. Displacement damage on P-channel VDMOS caused by different energy protons;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-12

3. Response to ionizing radiation of different biased and stacked pMOS structures;Sensors and Actuators A: Physical;2016-12

4. General purpose MOSFETs for the dosimetry of electron beams used in intra-operative radiotherapy;Sensors and Actuators A: Physical;2014-04

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