Effect of backgating on the field distribution in planar thin-film GaAs structures-Reference-Cited by-同舟云学术

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Effect of backgating on the field distribution in planar thin-film GaAs structures

Published:2001-12 Issue:12 Volume:32 Page:979-982
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Gorev Nikolai B.,Kodzhespirova Inna F.,Kovalenko Yury A.,Privalov Evgeny N.,Prokhorov Eugenio F.

Publisher

Elsevier BV

Subject

General Engineering

Reference11 articles.

1. Stability of performance and interfacial problems in GaAs MESFET's;Itoh;IEEE Trans. Electron Devices,1980

2. On the mechanism for microwave amplification in ‘supercritically’ doped n-GaAs;Spitalnik;Appl. Phys. Lett.,1973

3. Stabilisation mechanism for ‘supercritical’ transferred-electron amplifiers;Charlton;Electron. Lett.,1971

4. Static electric fields in microwave signal processing devices employing space charge waves;Kitaev;Sov. J. Commun. Technol. Electron.,1986

5. Carrier injection and backgating effect in GaAs MESFET's;Lee;IEEE Electron Device Lett.,1982

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