Author:
Dittongo S.,Boscardin M.,Bosisio L.,Dalla Betta G.-F.,Rachevskaia I.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
6 articles.
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1. Radiation-induced defects in different silicon (111) wafers by 400 keV electron irradiation;Rare Metals;2012-06
2. Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2009-06
3. Studies of bulk damage induced in different silicon materials by 900Mev electron irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2005-07
4. High-energy electron irradiation of different silicon materials;IEEE Transactions on Nuclear Science;2004-10
5. Radiation hardness of different silicon materials after high-energy electron irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2004-09