The X-ray energy response of silicon (B): Measurements

Author:

Owens A,Fraser G.W,Abbey A.F,Holland A,McCarthy K,Keay A,Wells A

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Wide bandgap semiconductor conversion devices for radioisotope microbatteries;Materials Science in Semiconductor Processing;2022-05

2. Ionization yield in silicon for eV-scale electron-recoil processes;Physical Review D;2020-09-28

3. Pair creation energy and Fano factor of silicon measured at 185 K using 55Fe X-rays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2018-09

4. The spectral response of X-ray CCDs in the energy band around Si-K edge: a solution to the Si-K edge problem for the XIS onboard Suzaku;High Energy, Optical, and Infrared Detectors for Astronomy VIII;2018-07-20

5. Pair creation energy and Fano factor of silicon measured using Fe55 x-rays;High Energy, Optical, and Infrared Detectors for Astronomy VIII;2018-07-06

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