Performances of epitaxial GaAs p/i/n structures for X-ray imaging-Reference-Cited by-同舟云学术

Performances of epitaxial GaAs p/i/n structures for X-ray imaging

Published:2002-07 Issue:1-2 Volume:487 Page:102-106
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Sun G.C,Samic H,Haguet V,Pesant J.C,Montagne J.P,Lenoir M,Bourgoin J.C

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Gallium Arsenide for γ-Ray Spectroscopy

2. R.K. Willardson, A.C. Beer (Eds.), Semi-insulating GaAs, in: Semiconductors and Semimetals, Vol. 20, Academic press, New York, 1984.

3. Growth of high purity GaAs using low-pressure vapour-phase epitaxy

4. Synchrotron characterization of deep depletion epitaxial GaAs detectors

5. A new GaAs material for X-ray imaging

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