Tunable lasing from 1.8 μm diode lasers: conditions and characteristics-Reference-Cited by-同舟云学术

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Tunable lasing from 1.8 μm diode lasers: conditions and characteristics

Published:1996-07 Issue:8 Volume:52 Page:871-875
ISSN:1386-1425
Container-title:Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy
language:en
Short-container-title:Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Author:

Popov Andrei A.,Imenkow Albert N.,Yakolev Yury P.

Publisher

Elsevier BV

Subject

Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference6 articles.

1. Long-Wavelength Semiconductor Lasers;Agrawal,1986

2. Single‐frequency GaInAsSb/AlGaAsSb quantum‐well ridge‐waveguide lasers emitting at 2.1 μm

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical model for the tuning characteristics of static, dynamic, and transient behaviors in temperature and injection current of DFB laser diodes;Acta Physica Sinica;2011

2. Continuous-wave operation of singlemode GaInAsSb lasers emitting near 2.2 [micro sign]m at Peltier temperatures;Electronics Letters;1998

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