Dislocation formation during the growth of large diameter, undoped GaAs single crystals-Reference-Cited by-同舟云学术

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Dislocation formation during the growth of large diameter, undoped GaAs single crystals

Published:1988-08 Issue:1 Volume:1 Page:23-27
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Grant Elliot A.,Vanderwater David,Wei Chia-Li

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Proc. 13th Int. Conf. on Defects in Semiconductors;Hutson,1985

2. Defect structure introduced during operation of heterojunction GaAs lasers

3. Temperature gradients, dopants, and dislocation formation during low-pressure LEC growth of GaAs

4. Silicon and indium doping of GaAs: Measurements of the effect of doping on mechanical behavior and relation with dislocation formation

5. J. P. Hirth and G. M. Pound, Prog. Mater. Sci.,

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Crystal Pulling from the Melt;1993

2. Photobehavior of paramagnetic anion antisites in plastically deformed GaAs;Journal of Applied Physics;1992-08-15

3. Large-area X-ray and CL study of SI GaAs wafers from various suppliers;Journal of Crystal Growth;1992-07

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