A complementary III–V heterostructure field effect transistor technology for high temperature integrated circuits

Author:

Wilson Craig,O'Neill Anthony,Baier Steven,Nohava James

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. High temperature electronics for supersonic aircraft;Christenson,1991

2. A new GaAs technology for stable FET's at 300 °C;Fricke;IEEE Electron Device Lett.,1989

3. Suitability of GaAs Schottky metallizations for continuous device operation at elevated temperatures up to 300 °C: a comparative study;Wurfl;Int. J. Electron.,1989

4. High temperature characteristics of GaAs based FETs;Wilson;Solid State Electron.,1994

5. High-temperature electrical characteristics of GaAs MESFET's (25–400 °C);Shoucair;IEEE Trans. Electron Devices,1992

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2. Ohmic Contacts to II–VI and III–V Compound Semiconductors;Processing of Wide Band Gap Semiconductors;2000

3. Ohmic contacts to GaAs epitaxial layers;Critical Reviews in Solid State and Materials Sciences;1997-09

4. Technology towards GaAs MESFET-based IC for high temperature applications;Materials Science and Engineering: B;1997-04

5. GaAs high temperature devices;High Temperature Electronics;1997

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