Gamma-ray diffraction in the study of silicon
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference27 articles.
1. Two new experimental diffraction methods for a precise measurement of crystal perfection
2. Pendellösung intensity-beat measurements with 0.0392- and 0.0265-Åγradiation in silicon
3. γ-Ray diffraction studies of the perfection of large silicon single crystals
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Getters in silicon;Modern Electronic Materials;2019-03-01
2. Application of the statistical dynamical theory to \boldgamma-ray diffraction experiments on low-dislocation quartz single crystals;Acta Crystallographica Section A Foundations of Crystallography;1999-03-01
3. Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology;Materials Science Forum;1997-12
4. Gamma-ray diffractometry investigation of dislocation density in massive quartz crystals;Journal of Crystal Growth;1997-05
5. Characterization of vacancy-related defects introduced into silicon during heat treatment by deep-level transient spectroscopy and gamma-ray diffraction techniques;Applied Physics A Materials Science & Processing;1996-03
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