Behaviour of Mn in GaSb grown by the Bridgman method
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Transport and Photoelectrical Properties of Gallium Arsenide Containing Deep Acceptors
2. Paramagnetic Resonance and Hall Coefficients in Fe‐Doped n‐Type GaP
3. Dependence of transition-metal impurity levels on host composition in III-V semiconductors
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1. Electrical and magneto resistance studies of bulk Ga1−xNixSb ternary alloys;Solid State Sciences;2011-01
2. Optical absorption and photoluminescence studies on heavily doped (Ga,Mn)Sb crystals;Semiconductor Science and Technology;2010-09-09
3. Optical characterization of gallium antimonide highly doped with manganese;Journal of Physics and Chemistry of Solids;2006-08
4. Preparation and optical properties of GaSb nanoparticles embedded in SiO2 composite films;Science in China Series A: Mathematics;2001-09
5. Luminescence properties of transition-metal-doped GaSb;Physical Review B;1998-03-15
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