Negative magnetoresistance for different orientations of n-type CdAs2 in the variable-range hopping regime
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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5. Impurity conduction and negative magnetoresistance in compensated n type indium phosphide, at low temperature
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1. Surface properties, chemical reactivity, and ambient stability of cadmium diarsenide CdAs2, a topological chiral material hosting Kramers-Weyl fermions;Applied Surface Science;2023-07
2. Fermiology of Chiral Cadmium Diarsenide CdAs2, a Candidate for Hosting Kramers–Weyl Fermions;The Journal of Physical Chemistry Letters;2023-03-23
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4. Low temperature electrical resistivity on the insulating side of the metal–insulator transition in CdAs2semiconductor;Physica B: Condensed Matter;2021-11
5. Influence of chemical functionalization of carbon nanotube on magnetoresistance transition in polyaniline composite;Synthetic Metals;2020-04
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