The effects of ionizing radiation on GaAs/AlGaAs and InGaAs/AlInAs heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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The effects of ionizing radiation on GaAs/AlGaAs and InGaAs/AlInAs heterojunction bipolar transistors

Published:1993-07 Issue:3 Volume:20 Page:280-291
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Witmer S.B.,Mittleman S.D.,Lehy D.,Ren F.,Fullowan T.R.,Kopf R.F.,Abernathy C.R.,Pearton S.J.,Humphrey D.A.,Montgomery R.K.,Smith P.R.,Kreskovsky J.P.,Grubin H.L.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. High Speed Semiconductor Devices;Asbeck,1990

2. HEMTs and HBTs: Devices, Fabrication and Circuits,1991

3. Subpicosecond InP/InGaAs heterostructure bipolar transistors

4. Intrinsic SEU Reduction from Use of Heterojunctions in Gallium Arsenide Bipolar Circuits

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation damage in GaN/AlGaN and SiC electronic and photonic devices;Journal of Vacuum Science & Technology B;2023-04-19

2. Proton-Induced Degradation of InP/InGaAs HBTs Predicted by Nonionizing Energy Loss Model;IEEE Transactions on Nuclear Science;2015-06

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