Extended defects and precipitates in LTGaAs, LTInAlAs and LTInP
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. New MBE buffer used to eliminate backgating in GaAs MESFETs
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1. New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate;Crystallography Reports;2019-03
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5. Stress Relaxation Phenomena in Buried Quantum Dots;Self-Assembled Quantum Dots;2008
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