LTMBE GaAs: present status and perspectives
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference26 articles.
1. Growth temperature dependence in molecular beam epitaxy of gallium arsenide
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3. Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 µm cw and pulse excitation;Japanese Journal of Applied Physics;2016-03-23
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