Fabrication of millimetre-wave Gunn and IMPATT devices with integral heat sink and integral bonding ribbon: a new approach-Reference-Cited by-同舟云学术

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Fabrication of millimetre-wave Gunn and IMPATT devices with integral heat sink and integral bonding ribbon: a new approach

Published:1994-12 Issue:1-3 Volume:28 Page:253-256
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Chandra Ishwar,Gulati R.,Sharma H.S.,Mohan S.,Naik A.A.,Sai Saravanan G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Transferred Electron Devices;Hobson,1972

3. Semiconductor Devices and Integrated Electronics;Milnes,1980

4. Chapter 1 Ohmic Contacts to III-V Compound Semiconductors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in Gunn Diode Technology;IETE Technical Review;1997-11

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