The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD-Reference-Cited by-同舟云学术

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The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD

Published:1996-03 Issue:1-2 Volume:38 Page:36-40
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Polyakov A.Y.,Chelniy A.A.,Smirnov N.B.,Govorkov A.V.,Milnes A.G.,Li Xiaolei,Aluev A.N.,Orlov P.B.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Gallium Arsenide and Related Compounds 1989;Ishikawa,1989

2. Advanced III–V Compound Semiconductor Growth, Processing and Devices;Tanaka,1990

3. Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers

4. Npn and pnp GaInP/GaAs heterojunction bipolar transistors grown by MOCVD

5. Zn doping characteristics for InGaAlP grown by low‐pressure metalorganic chemical vapor deposition

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy;Journal of Applied Physics;1998-07-15

2. Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE;MRS Proceedings;1996

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