The effects of probe power on the spatial variation of the room temperature photoluminescence wavelength of an InGaAsP epitaxial structure
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. Non-destructive, whole wafer assessment of optoelectronic epitaxial materials
2. Investigation of uniform deposition of GaInAsP quantum wells by MOCVD, Physical Concept of Materials for Novel Optoelectric Device Applications II: Device Physics and Applications;Puetz,1991
3. Luminescence characteristics of the (GaP)n(GaAs)n/GaAs atomic layer short‐period superlattices
4. Correlations of photoluminescence with defect densities in semi-insulating gallium arsenide
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1. INNATE RESISTANCE TO EXPERIMENTAL AFRICAN TRYPANOSOMIASIS: DIFFERENCES IN CYTOKINE (TNF-α, IL-6, IL-10 AND IL-12) PRODUCTION BY BONE MARROW-DERIVED MACROPHAGES FROM RESISTANT AND SUSCEPTIBLE MICE;Cytokine;2000-07
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