Lattice strain near the interface of ZnSe deposited by molecular beam epitaxy on GaAs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference11 articles.
1. The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs Substrates
2. Coherent Growth of ZnSe on GaAs by MOCVD
3. Estimation of Strains in MBE-Grown ZnSe Films by Raman Scattering
4. Interface Stress at ZnSe/GaAs:Cr Heterostructure
5. Optimal crystal growth condition of ZnSe grown by molecular beam epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. ZnSe films: preparation and properties;Vacuum;1995-11
2. Photoluminescence and Raman Scattering of ZnSeZnTe Superlattices;Physica Status Solidi (a);1992-10-16
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