Minimum oxygen dose for reliable application of SIMOX-Reference-Cited by-同舟云学术

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Minimum oxygen dose for reliable application of SIMOX

Published:1992-01 Issue:1-2 Volume:12 Page:149-151
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Badenes G.,Burbach G.,Gassel H.,Vogt H.,Walter A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Future prospects for SIMOX technology;Celler,1990

2. The status of SIMOX technology;Guerra,1990

3. SIMOX material: from research to production;Lamure,1990

4. High quality silicon-on-insulator substrates by implanted oxygen ions;Belz;Mater. Sci. Eng.,1989

5. Measurement of SOI film thickness;Badenes;Microelectron. Eng. J.,1991

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and structural characteristics of thin buried oxides;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-02

2. Silicon on thin insulator: prediction of the oxygen fluence required for the formation of a continuous buried oxide;Materials Science and Engineering: B;1994-01

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