Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering Tomography
2. Observation of micro-defects in as-grown and heat treated Si crystals by infrared laser scattering tomography
3. Development of a bulk microdefect analyzer for Si wafers
4. Scanning Infra-Red Microscope Investigation of Oxide Particles in Czochralski Silicon Heat-Treated for Intrinsic Gettering
5. An analysis of the oxygen condensation processes in silicon by laser-scanning tomography
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1. Editors’ Choice—Precipitation of Suboxides in Silicon, their Role in Gettering of Copper Impurities and Carrier Recombination;ECS Journal of Solid State Science and Technology;2020-01-08
2. Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?;Journal of Crystal Growth;2018-05
3. Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace;Journal of the Korean Crystal Growth and Crystal Technology;2016-06-30
4. Jan Vanhellemont - 35 years of materials research in microelectronics;physica status solidi (c);2016-06-03
5. Czochralski Growth of Silicon Crystals;Handbook of Crystal Growth;2015
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