Perturbed angular correlation spectroscopy of acceptor-donor pairs in silicon, germanium and GaAs-Reference-Cited by-同舟云学术

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Perturbed angular correlation spectroscopy of acceptor-donor pairs in silicon, germanium and GaAs

Published:1989-10 Issue:1-4 Volume:4 Page:169-172
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Achtziger N.,Baurichter A.,Deubler S.,Forkel D.,Plank H.,Puschmann M.,Wolf H.,Witthuhn W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Alpha-, Beta-, Gamma-Ray Spectroscopy;Fraunfelder,1965

2. Detection of In‐P and In‐Sb atom pairs by perturbed angular correlation in silicon

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1. Evidence of palladium-defect pairing in intrinsic germanium;Hyperfine Interactions;2010-04

2. Evidence of palladium-defect pairing in intrinsic germanium;HFI / NQI 2010;2010

3. Exploring solid state physics properties with radioactive isotopes;Reports on Progress in Physics;1999-01-01

4. Chapter 6 Perturbed Angular Correlation Studies of Defects;Semiconductors and Semimetals;1999

5. Perturbed angular correlation spectroscopy of hydrogen-passivated indium acceptors in silicon;Materials Science and Engineering: B;1989-10

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