A uniaxial stress study of a copper-related photoluminescence band in silicon-Reference-Cited by-同舟云学术

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A uniaxial stress study of a copper-related photoluminescence band in silicon

Published:1989-10 Issue:1-4 Volume:4 Page:269-272
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

McGuigan K.G.,Henry M.O.,Carmo M.C.,Davies G.,Lightowlers E.C.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. A new photoluminescence band in silicon lightly doped with copper

2. Bound exciton recombination at Mn-Zn pair centres in silicon

3. Physics of Colour Centres;Fitchen,1968

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3. Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched28Si;Journal of Applied Physics;2011-10-15

4. Reduction of the Linewidths of Deep Luminescence Centers inSi28Reveals Fingerprints of the Isotope Constituents;Physical Review Letters;2008-04-30

5. Cu0*: A metastable configuration of the{Cus,Cui}pair in Si;Physical Review B;2005-09-01

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