Activation and gettering of intrinsic metallic impurities during rapid thermal processing
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Elimination of Oxidation‐Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers: I . Phosphorus Diffusion‐Induced Misfit Dislocations
2. Transition metals in silicon
3. Rapid thermal annealing: An efficient means to reveal chromium profiles in Si after diffusion and gettering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals;Rapid Thermal Processing of Semiconductors;1997
2. Phosphorus diffusion into silicon from a spin‐on source using rapid thermal processing;Journal of Applied Physics;1992-06
3. Phosphorus Gettering by Rapid Thermal Processing;MRS Proceedings;1992
4. Bulk diffusion length improvement by rapid thermal gettering;Applied Physics Letters;1991-12-23
5. The use of rapid thermal annealing for studying contamination in silicon;Materials Science and Engineering: B;1991-12
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