Microstructural characteristics of mixed III–V epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Surface layer spinodal decomposition in In1−xGaxAsyP1−yand In1−xGaxAs grown by hydride transport vapor‐phase epitaxy
2. Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid‐phase epitaxial (001) GaInAsP layers
3. Two-dimensional phase separation inIn1−xGaxAsyP1−yepitaxial layers
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2. Coexistence of chalcopyrite and CuAu-type ordered structures in In0.52Al0.48As epilayers grown on InP substrates;Physica B: Condensed Matter;2006-04
3. Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine;Thin Solid Films;2004-06
4. Inhibición de la relajación plástica en heteroestructuras InGaAs/GaAs(001) crecidas a baja temperatura;Boletín de la Sociedad Española de Cerámica y Vidrio;2004-04-30
5. Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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