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InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substrates

  • Published:1995-03 Issue:3 Volume:36 Page:271-276
  • ISSN:0927-0248
  • Container-title:Solar Energy Materials and Solar Cells
  • language:en
  • Short-container-title:Solar Energy Materials and Solar Cells

Author:

Dotor M.L.,Golmayo D.,Calle A.,Sendra J.R.,Anguita J.V.,Gonzalez L.,Gonzalez Y.,Briones F.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Monolithic, seriesconnected InP/Ga0.47In0.53As tandem solar cells;Wanlass,1992

2. Monolithic, two-terminal InP/Ga0.47In0.53As tandem solar cells;Wanlass,1993

3. Analysis of AlGaAs-GaInAs cascade solar cell under AM 0-AM 5 spectra

4. An In0.53Ga0.47As tunnel diode for monolithic multijunction solar cell application;Shen,1988

5. High performance In0.47Ga0.53As tunnel junctions grown by chemical beam epitaxy on InP and GaAs and Si substrates;Vilela,1993

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