Relation of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure-Reference-Cited by-同舟云学术

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Relation of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure

Published:1996-06 Issue: Volume:41-42 Page:315-323
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

NELSON A,GABOR A,CONTRERAS M,MASON A,ASOKAKUMAR P,LYNN K

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Perspectives of chalcopyrite-based CIGSe thin-film solar cell: a review;Journal of Materials Science: Materials in Electronics;2020-04-10

2. Features of KF and NaF Postdeposition Treatments of Cu(In,Ga)Se2 Absorbers for High Efficiency Thin Film Solar Cells;Chemistry of Materials;2015-08-05

3. Study of defects in electron irradiated CuInSe2 by positron lifetime spectroscopy;Journal of Applied Physics;1998-01

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