Dielectric characteristics of AlN films grown by d.c.-magnetron sputtering discharge-Reference-Cited by-同舟云学术

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Dielectric characteristics of AlN films grown by d.c.-magnetron sputtering discharge

Published:2001-03 Issue:3-7 Volume:10 Page:1317-1321
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Oliveira I.C,Massi M,Santos S.G,Otani C,Maciel H.S,Mansano R.D

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Structural characterization of aluminum films deposited on sputtered‐titanium nitride/silicon substrate by metalorganic chemical vapor deposition from dimethylethylamine alane

2. Tsoubouchi, K., Sugai, K., Mikoshiba, Proc. IEEE Symp. Ultrason. 14 (1983) 340.

3. A comparison of NF3 and NH3 as the nitrogen sources for AIN crystal growth by metalorganic chemical vapor deposition

4. Intrinsic stress in A1N prepared by dual-ion-beam sputtering

5. Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablation

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4. A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition;Electronic Materials Letters;2016-12-09

5. Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition;IEEE Sensors Journal;2016-01

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