Growth of CVD heteroepitaxial diamond on silicon (001) and its electronic properties-Reference-Cited by-同舟云学术

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Growth of CVD heteroepitaxial diamond on silicon (001) and its electronic properties

Published:2000-09 Issue:9-10 Volume:9 Page:1626-1631
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

He X.C,Shen H.S,Zhang Z.M,Hu X.J,Wan Y.Z,Shen T

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Gerber, J. Roberson, S. Sattal, H. Ehrbardt, Diamond Relat. Mater., 5 (1996) 261.

2. Characterization of bias-enhanced nucleation of diamond on silicon byinvacuosurface analysis and transmission electron microscopy

3. X‐ray photoelectron spectroscopy study of substrate surface pretreatments for diamond nucleation

4. Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma

5. Diamond films epitaxially grown by step-flow mode

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3. Heteroepitaxial Growth of Single Crystal Diamond Films on Iridium: Procedure and Mechanism;Journal of Inorganic Materials;2019

4. Growth of diamond structures using high speed gas jet deposition activated in heated tungsten channels;Surface and Coatings Technology;2017-09

5. The effect of number of carbon atoms in a molecular precursor on the crystallite size in diamond films prepared by plasma-enhanced chemical-vapor deposition;Technical Physics Letters;2013-06

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