Bonding structure of carbon nitride films deposited by reactive plasma beam sputtering-Reference-Cited by-同舟云学术

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Bonding structure of carbon nitride films deposited by reactive plasma beam sputtering

Published:2001-03 Issue:3-7 Volume:10 Page:1142-1146
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Angleraud B,Mubumbila N,Tessier P.Y,Fernandez V,Turban G

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Structural properties and electronic structure of low-compressibility materials: β-Si3N4and hypothetical β-C3N4

2. The effects of substrates on carbon nitride thin films prepared by direct dual ion beam deposition

3. XPS spectra of thin CNx films prepared by chemical vapor deposition

4. Evidence for continuous areas of crystalline β–C3N4 in sputter-deposited thin films

5. Effects of heat treatment on the field emission property of amorphous carbon nitride

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2. Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled plasmas;Journal of Vacuum Science & Technology A;2020-09

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4. Non-uniform Excitation States in Photoinduced Deformation of Amorphous Carbon Nitride Films;Scientific Reports;2018-10-10

5. Role of precursors on the photophysical properties of carbon nitride and its application for antibiotic degradation;Environmental Science and Pollution Research;2017-02-14

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